EDN

Synopsys Implementation Solution Included in TSMC 16-nm Reference Flow for FinFET Design

Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced delivery of a comprehensive design ...
Nasdaq

Samsung Foundry Certifies Synopsys Design Compiler NXT for 5/4nm FinFET Process Technologies

Customers adopting Design Compiler NXT report significant reduction in runtimes together with improvements in power, performance and area (PPA) New advanced optimizations, such as concurrent clock and ...
Nasdaq

GLOBALFOUNDRIES Qualifies Synopsys Fusion Design Platform on 12LP FinFET Platform

Qualification includes leading products Design Compiler NXT, IC Compiler II, StarRC, PrimeTime, and IC Validator Collaboration delivers a combination of accuracy and highest performance with Fusion ...
Business Wire

Cadence Achieves EDA Certification for TSMC 5nm and 7nm+ FinFET Process Technologies to Facilitate Mobile and HPC Design Creation

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...
Semiconductor Engineering

Stress-Related Local Layout Effects In FinFET Technology And Device Design Sensitivity

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
Purdue University

New 'finFET' promising for smaller transistors, more powerful chips

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
EDN

Scaling down on the wings of a FinFET-DGCMOS

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
Design-Reuse

Attopsemi Scales I-fuse® Technology to 7nm FinFET following 12nm Silicon Success

Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...
Electronic Design

16nm/14nm FinFETs: Enabling The New Electronics Frontier

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.
Electronic Design

Imec Demonstrates III-V Compound FinFET Devices

November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...
ExtremeTech

Samsung Becomes First Foundry to Begin Production at 3nm

Last week, rumors surfaced that Samsung would soon claim it had beaten TSMC to the 3nm punch. Yesterday, Samsung confirmed the news with a celebratory press release. It is the first global foundry to ...