Chipmaking systems create the smallest atomic-scale features in 3D Gate-All-Around transistorsPrecision™ Selective Nitride PECVD preserves ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN) power transistors, making them safer and easier to utilize in high-value ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

Saelig Company, Inc. has announced availability of the CLIPPER CLP1500V15A1, an oscilloscope adapter that allows small voltages to be measured in the presence of very high voltages, such as those ...

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...

Researchers from the Delft University of Technology (TU Delft) have investigated how power electronics may be embedded in solar cells and proposed several design options for PV devices integrating ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...

Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...