Nature

Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate–drain field relief and improved off-state robustness

GaAs pseudomorphic high-electron-mobility transistors (pHEMTs) are widely employed in radio-frequency (RF) and microwave front-end circuits owing to their high electron mobility and excellent ...
Nature

Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices

For the continuation in scaling of the complementary metal oxide semiconductor (CMOS) technology at the sub-5 nm technology node, FinFET-based logic devices are competing against the gate-all-around ...
Semiconductor Engineering

Understanding Why Drain-Current in GAAFETs Deviates from Thermionic Dependence at Negative Gate Voltages (Sandia National Lab, LIST)

A new technical paper, “Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors,” was published by researchers at Sandia National ...
Semiconductor Engineering

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)

A new technical paper titled “Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts” was published by researchers at National Yang Ming Chiao Tung University. “This ...